Share Email Print

Proceedings Paper

Electronic structure of (211) AlAs/GaAs superlattices
Author(s): J. Arriaga; D. A. Contreras-Solorio
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The electronic structure of (211) AlAs/GaAs superlattices at the (Gamma) point of the superlattice is studied for (2,2) less than or equal to (n,m) less than or equal to (20,20), where n(m) is the number of principal layers of AlAs (GaAs). The calculations are based on a sp3s* empirical tight-binding model and on a surface green-function matching analysis. The evolution of the energy gap versus the variation of n and m, and the confinement of the different states are discussed. Also, the orbital character of the wave functions is studied.

Paper Details

Date Published: 5 February 1996
PDF: 4 pages
Proc. SPIE 2730, Second Iberoamerican Meeting on Optics, (5 February 1996); doi: 10.1117/12.231022
Show Author Affiliations
J. Arriaga, Benemerita Univ. Autonoma de Puebla (Mexico)
D. A. Contreras-Solorio, Univ. Autonoma de Zacatecas (Mexico)

Published in SPIE Proceedings Vol. 2730:
Second Iberoamerican Meeting on Optics
Daniel Malacara-Hernandez; Sofia E. Acosta-Ortiz; Ramon Rodriguez-Vera; Zacarias Malacara; Arquimedes A. Morales, Editor(s)

© SPIE. Terms of Use
Back to Top