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Proceedings Paper

Silicon macroporous arrays with high aspect ratio prepared by ICP etching
Author(s): Guozheng Wang; Bingchen Yang; Ji Wang; Jikai Yang; Qingduo Duanmu
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Paper Abstract

This paper reports on a macroporous silicon arrays with high aspect ratio, the pores of which are of 162, 205, 252, 276μm depths with 6, 10, 15 and 20 μm diameters respectively, prepared by Multiplex Inductively Coupled Plasma (ICP) etching. It was shown that there are very differences in process of high aspect ratio microstructures between the deep pores, a closed structure, and deep trenches, a open structure. The morphology and the aspect ratio dependent etching were analyzed and discussed. The macroporous silicon etched by ICP process yield an uneven, re-entrant, notched and ripples surface within the pores. The main factors effecting on the RIE lag of HARP etching are the passivation cycle time, the pressure of reactive chamber, and the platen power of ICP system.

Paper Details

Date Published: 20 February 2018
PDF: 6 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106970Y (20 February 2018); doi: 10.1117/12.2309909
Show Author Affiliations
Guozheng Wang, Changchun Univ. of Science and Technology (China)
Bingchen Yang, Changchun Univ. of Science and Technology (China)
Ji Wang, Changchun Univ. of Science and Technology (China)
Jikai Yang, Changchun Univ. of Science and Technology (China)
Qingduo Duanmu, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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