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Proceedings Paper

Simulation of high performance GaN/InGaN heterojunction phototransistor
Author(s): Junxi Zhang; Yidong Wang; Jun Chen
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Paper Abstract

In this paper, we report a two-dimension(2D) simulation of high performance GaN/In0.03Ga0.97N/GaN heterojunction phototransistor(HPT) by Silvaco TCAD and provide a direction for the optimization of GaN/InGaN HPTs. The dark current variation with the change of base parameter is studied in detail, it is found that the device with lower base doping has lower punch-through voltage. The thinner base will also reduce the punch-through voltage. The dark current at breakdown point can be affected by the base carrier concentration and the thickness.

Paper Details

Date Published: 20 February 2018
PDF: 6 pages
Proc. SPIE 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974N (20 February 2018); doi: 10.1117/12.2309845
Show Author Affiliations
Junxi Zhang, Soochow Univ. (China)
Yidong Wang, Soochow Univ. (China)
Jun Chen, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10697:
Fourth Seminar on Novel Optoelectronic Detection Technology and Application
Weiqi Jin; Ye Li, Editor(s)

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