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Black holes enabled light bending and trapping in ultrafast silicon photodetectors
Author(s): Hilal Cansizoglu; Yang Gao; Soroush Ghandiparsi; Cesar Bartolo Perez; Hasina H. Mamtaz; Mehmet F. Cansizoglu; Toshishige Yamada; Ekaterina Ponizovskaya Devine; Aly F. Elrefaie; Shih-Yuan Wang; M. Saif Islam
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Paper Abstract

Micro and nanoscale holes on the surfaces of indirect band gap semiconductors such as silicon can enable perpendicular light bending and trapping of photons to enhance the light material interactions and absorption by orders of magnitude. The ‘bending’ of a vertically oriented light beam at nearly 90 degrees can be visualized as radial waves generated by a pebble dropped into a calm pool of water. Such bending and photon trapping result in an increased optical absorption path enabling very high light absorption coefficients. This observation led to the design of silicon photodetectors with high broadband efficiency above 50% and record ultrafast response contributing to more than 40 billion bits of data per second (Gb/s) communication speed.

Paper Details

Date Published: 31 May 2018
PDF: 6 pages
Proc. SPIE 10639, Micro- and Nanotechnology Sensors, Systems, and Applications X, 106390I (31 May 2018); doi: 10.1117/12.2309830
Show Author Affiliations
Hilal Cansizoglu, Univ. of California, Davis (United States)
Yang Gao, Univ. of California, Davis (United States)
Soroush Ghandiparsi, Univ. of California, Davis (United States)
Cesar Bartolo Perez, Univ. of California, Davis (United States)
Hasina H. Mamtaz, Univ. of California, Davis (United States)
Mehmet F. Cansizoglu, Univ. of California, Davis (United States)
Toshishige Yamada, Univ. of California, Santa Cruz (United States)
Ekaterina Ponizovskaya Devine, Univ. of California, Davis (United States)
Aly F. Elrefaie, W&WSens Devices, Inc. (United States)
Shih-Yuan Wang, W&WSens Devices, Inc. (United States)
M. Saif Islam, Univ. of California, Davis (United States)


Published in SPIE Proceedings Vol. 10639:
Micro- and Nanotechnology Sensors, Systems, and Applications X
Thomas George; Achyut K. Dutta; M. Saif Islam, Editor(s)

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