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Dark current reduction of InGaAs photodiode by low stress diffusion mask
Author(s): Young Ho Kim; Byoung Wook Lee; Sung Yong Ko; Chang Soo Ha; Han Jung
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Paper Abstract

InGaAs detector for SWIR imaging is widely used for remote sensing, medical application, personal identification etc. To reduce the required power for various environmental condition, reducing dark current is crucial. The dark current of InGaAs detector is known to come from defects induced during the growth of wafers and the process to fabricate FPAs. Especially, when high temperature is applied for the diffusion of Zn to form p-type junction on n-type InP/InGaAs substrate, the diffusion barrier of Zn on the substrate experiences large expansion and add stress in the substrate. The induced stress will increase defects and increase dark current. In this work, to reduce the stress of the Zn diffusion barrier, balanced diffusion barrier with multiple layer is applied. By reducing the stress, the dark current density has reduced to below 10 nA/cm2, which is suitable for low power operation.

Paper Details

Date Published: 23 May 2018
PDF: 5 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241T (23 May 2018); doi: 10.1117/12.2309319
Show Author Affiliations
Young Ho Kim, i3system, Inc. (Korea, Republic of)
Byoung Wook Lee, i3system, Inc. (Korea, Republic of)
Sung Yong Ko, i3system, Inc. (Korea, Republic of)
Chang Soo Ha, Agency for Defense Development (Korea, Republic of)
Han Jung, i3system, Inc. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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