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Proceedings Paper • Open Access

First measurements of true charge transfer TDI (Time Delay Integration) using a standard CMOS technology
Author(s): F. Mayer; Henri Bugnet; S. Pesenti; C. Guicherd; B. Gili; R. Bell; B. De Monte; T. Ligozat

Paper Abstract

This work focus on an innovative noiseless charge transfer TDI pixel fabricated with a one poly standard Imaging CMOS technology. Parallel column charge to voltage conversion decreases drastically the number of needed charge transfers while keeping high motion/dynamic MTF (multi phase approach), high QE (photodiode based architecture) and low noise (no noise summation).

Paper Details

Date Published: 20 November 2017
PDF: 7 pages
Proc. SPIE 10564, International Conference on Space Optics — ICSO 2012, 105640N (20 November 2017); doi: 10.1117/12.2309230
Show Author Affiliations
F. Mayer, e2v semiconductors (France)
Henri Bugnet, e2v semiconductors (France)
S. Pesenti, e2v semiconductors (France)
C. Guicherd, e2v semiconductors (France)
B. Gili, e2v semiconductors (France)
R. Bell, e2v technologies (United Kingdom)
B. De Monte, e2v semiconductors (France)
T. Ligozat, e2v semiconductors (France)


Published in SPIE Proceedings Vol. 10564:
International Conference on Space Optics — ICSO 2012
Bruno Cugny; Errico Armandillo; Nikos Karafolas, Editor(s)

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