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Proceedings Paper • Open Access

Ionizing doses and displacement damage testing of COTS CMOS imagers
Author(s): Frédéric Bernard; Sophie Petit; Sophie Courtade

Paper Abstract

CMOS sensors begin to be a credible alternative to CCD sensors in some space missions. However, technology evolution of CMOS sensors is much faster than CCD one's. So a continuous technology evaluation is needed for CMOS imagers. Many of commercial COTS (Components Off The Shelf) CMOS sensors use organic filters, micro-lenses and non rad-hard technologies. An evaluation of the possibilities offered by such technologies is interesting before any custom development. This can be obtained by testing commercial COTS imagers. This article will present electro-optical performances evolution of off the shelves CMOS imagers after Ionizing Doses until 50kRad(Si) and Displacement Damage environment tests (until 1011 p/cm2 at 50 MeV). Dark current level and non uniformity evolutions are compared and discussed. Relative spectral response measurement and associated evolution with irradiation will also be presented and discussed. Tests have been performed on CNES detection benches.

Paper Details

Date Published: 21 November 2017
PDF: 8 pages
Proc. SPIE 10566, International Conference on Space Optics — ICSO 2008, 105662S (21 November 2017); doi: 10.1117/12.2308285
Show Author Affiliations
Frédéric Bernard, Ctr. National d'Études Spatiales (France)
Sophie Petit, Ctr. National d'Études Spatiales (France)
Sophie Courtade, ASSYSTEM (France)

Published in SPIE Proceedings Vol. 10566:
International Conference on Space Optics — ICSO 2008
Josiane Costeraste; Errico Armandillo; Nikos Karafolas, Editor(s)

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