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Proceedings Paper • Open Access

Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level
Author(s): Arnaud Garnache; Mikhaël Myara; A. Laurain; Aude Bouchier; J.P. Perez; P. Signoret; I. Sagnes; D. Romanini

Paper Abstract

We present a highly coherent semiconductor laser device formed by a ½-VCSEL structure and an external concave mirror in a millimetre high finesse stable cavity. The quantum well structure is diode-pumped by a commercial single mode GaAs laser diode system. This free running low noise tunable single-frequency laser exhibits >50mW output power in a low divergent circular TEM00 beam with a spectral linewidth below 1kHz and a relative intensity noise close to the quantum limit. This approach ensures, with a compact design, homogeneous gain behaviour and a sufficiently long photon lifetime to reach the oscillation-relaxation-free class-A regime, with a cut off frequency around 10MHz.

Paper Details

Date Published: 21 November 2017
PDF: 8 pages
Proc. SPIE 10566, International Conference on Space Optics — ICSO 2008, 105661Q (21 November 2017); doi: 10.1117/12.2308259
Show Author Affiliations
Arnaud Garnache, Univ. Montpellier (France)
Mikhaël Myara, Univ. Montpellier (France)
A. Laurain, Univ. Montpellier (France)
Aude Bouchier, Lab. d'Analyse et d'Architecture des Systèmes (France)
J.P. Perez, Univ. Montpellier (France)
P. Signoret, Univ. Montpellier (France)
I. Sagnes, Lab. de Photonique et de Nanostructures (France)
D. Romanini, Lab. de Spectrométrie Physique (France)

Published in SPIE Proceedings Vol. 10566:
International Conference on Space Optics — ICSO 2008
Josiane Costeraste; Errico Armandillo; Nikos Karafolas, Editor(s)

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