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Proceedings Paper

GaAs/AlGaAs multiquantum well IR detectors
Author(s): Masatoshi Kobayashi; Masahiko Nakanishi; Y. Notani; K. Aono; Yoshiharu Komine; Wataru Susaki
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Paper Abstract

GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type detectors, 65 V/W for B-type detectors, and 130 V/W for C-type detectors. The corresponding specific detectivities at peak wavelength were 2.8 x 10 exp 9 cm sq rt Hz/W, 2.7 x 10 exp 9 cm sq rt Hz/W, and 2.7 x 10 exp 9 cm sq rt Hz/W, respectively. These values are about one order lower than those of conventional CdHgTe photoconductive devices.

Paper Details

Date Published: 1 November 1990
PDF: 6 pages
Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); doi: 10.1117/12.23078
Show Author Affiliations
Masatoshi Kobayashi, Mitsubishi Electric Corp. (Japan)
Masahiko Nakanishi, Mitsubishi Electric Corp. (Japan)
Y. Notani, Mitsubishi Electric Corp. (Japan)
K. Aono, Mitsubishi Electric Corp. (Japan)
Yoshiharu Komine, Mitsubishi Electric Corp. (Japan)
Wataru Susaki, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1341:
Infrared Technology XVI
Irving J. Spiro, Editor(s)

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