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Proceedings Paper

Chemical trimming overcoat: an advanced composition and process for photoresist enhancement in lithography
Author(s): Xisen Hou; Cong Liu; Kevin Rowell; Irvinder Kaur; Mingqi Li; Paul Baranowski; Jong Park; Cheng Bai Xu
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Paper Abstract

In the semiconductor manufacturing industry, photoresist materials are used for transferring an image to one or more underlying layers. To increase the integration density of semiconductor devices and reduce cost of ownership, continuous development efforts towards advanced lithography processes, such as multiple patterning methods, have been devoted to reduce critical dimension. Multiple patterning processes, however, often encounter challenges to obtain an appreciable process window due to the poor aerial image contrast at the defocus region, not to mention the complexity in process and high cost. Herein, we report a novel CTOTM photoresist trimming solution as a post-lithography spin-on method to enhance photoresist performance in not only effectively reducing critical dimension, but also enabling larger process window, lower line width roughness, less scum and lower defectivity. This is a versatile process that is compatible with both acrylic and polyhydroxystyrene types of photoresists, therefore allowing it to become a general process for a wide range of applications across ArF, KrF and EUV lithography.

Paper Details

Date Published: 13 March 2018
PDF: 7 pages
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105861I (13 March 2018); doi: 10.1117/12.2307674
Show Author Affiliations
Xisen Hou, The Dow Chemical Company (United States)
Cong Liu, The Dow Chemical Company (United States)
Kevin Rowell, The Dow Chemical Company (United States)
Irvinder Kaur, The Dow Chemical Company (United States)
Mingqi Li, The Dow Chemical Company (United States)
Paul Baranowski, The Dow Chemical Company (United States)
Jong Park, The Dow Chemical Company (United States)
Cheng Bai Xu, The Dow Chemical Company (United States)


Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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