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Temperature-dependent photoluminescence in nitrogen-doped graphene quantum dots
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Paper Abstract

In this research, we have synthesized graphene quantum dots (GQDs) concurrent with N doping by pulsed laser ablation (PLA) of graphene oxide (GO) with urea. The synthesized N-doped GQDs (N-GQDs) with an average diameter less than 5 nm and N/C atomic ratio of 33.4% have been demonstrated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS), respectively. The temperature dependence of the photoluminescence (PL) intensity in GQDs and N-GQDs were investigated. The PL intensity of the GQDs was quenched monotonously with increasing temperature. However, an unusual enhancement of PL intensity in N-GQDs was observed with temperatures within the temperature range of around 50-150 K. We suggest that the distinct dependence of PL intensity of N-GQDs on the temperature originated from a carrier transfer mechanism between the N-dopant induced state (energy level) and quantum-dot emitting states. This study is rendered advantageous in understanding the effect of N-doping on the luminescence properties of GQDs useful for the potential applications.

Paper Details

Date Published: 4 May 2018
PDF: 6 pages
Proc. SPIE 10672, Nanophotonics VII, 1067246 (4 May 2018); doi: 10.1117/12.2307445
Show Author Affiliations
Svette Reina Merden S. Santiago, Chung Yuan Christian Univ. (Taiwan)
Tzu-Neng Lin, Chung Yuan Christian Univ. (Taiwan)
Ji-Lin Shen, Chung Yuan Christian Univ. (Taiwan)


Published in SPIE Proceedings Vol. 10672:
Nanophotonics VII
David L. Andrews; Angus J. Bain; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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