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Shot-noise limited throughput of soft x-ray ptychography for nanometrology applications
Author(s): Wouter Koek; Bastiaan Florijn; Stefan Bäumer; Rik Kruidhof; Hamed Sadeghian
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Paper Abstract

Due to its potential for high resolution and three-dimensional imaging, soft x-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft x-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2 , and a full three-dimensional measurement takes roughly 6 hours per μm2 . Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.

Paper Details

Date Published: 13 March 2018
PDF: 8 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058533 (13 March 2018); doi: 10.1117/12.2306488
Show Author Affiliations
Wouter Koek, TNO (Netherlands)
Bastiaan Florijn, TNO (Netherlands)
Stefan Bäumer, TNO (Netherlands)
Rik Kruidhof, TNO (Netherlands)
Hamed Sadeghian, TNO (Netherlands)
Eindhoven Univ. of Technology (Netherlands)


Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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