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Proceedings Paper

Numerical simulations and experimental study of terahertz photoconductive antennas based on GaAs and its ternary compounds
Author(s): D. V. Lavrukhin; G. M. Katyba; A. E. Yachmenev; R. R. Galiev; I. A. Glinskiy; R. A. Khabibullin; Yu. G. Goncharov; I. E. Spektor; D. I. Khusyainov; A. M. Buryakov; E. D. Mishina; N. V. Chernomyrdin; K. I. Zaytsev; D. S. Ponomarev
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Paper Abstract

We present the results of numerical and experimental study of the photoconductive antennas (PCAs) based on GaAs and its ternary compounds. We produced three photoconductive materials with different indium content, which then were applied for fabrication of the THz PCAs. These PCAs were used as emitters of the THz pulsed spectrometer. We evaluated the stationary transient current generated by the PCAs, simulated their I-V characteristics, and compared them with the experimental ones. Using the finite integration method, we studied the thermal properties of the PCAs and demonstrated significant influence of the heat-sink on the leakage currents of the InGaAs-based PCA. We showed that the heat-sink reduces the operation temperature of the InGaAs-based PCAs by 40-64 % depending on the indium content. The observed results might be interesting for applications of the PCAs in THz pulsed spectroscopy and imaging.

Paper Details

Date Published: 9 May 2018
PDF: 7 pages
Proc. SPIE 10680, Optical Sensing and Detection V, 106801M (9 May 2018); doi: 10.1117/12.2306189
Show Author Affiliations
D. V. Lavrukhin, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
G. M. Katyba, Bauman Moscow State Technical Univ. (Russian Federation)
Institute of Solid State Physics (Russian Federation)
A. E. Yachmenev, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
R. R. Galiev, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
I. A. Glinskiy, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
Moscow Technological Univ. (Russian Federation)
R. A. Khabibullin, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
Yu. G. Goncharov, Prokhorov General Physics Institute (Russian Federation)
I. E. Spektor, Prokhorov General Physics Institute (Russian Federation)
D. I. Khusyainov, Moscow Technological Univ. (Russian Federation)
A. M. Buryakov, Moscow Technological Univ. (Russian Federation)
E. D. Mishina, Moscow Technological Univ. (Russian Federation)
N. V. Chernomyrdin, Bauman Moscow State Technical Univ. (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
K. I. Zaytsev, Bauman Moscow State Technical Univ. (Russian Federation)
Prokhorov General Physics Institute (Russian Federation)
D. S. Ponomarev, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10680:
Optical Sensing and Detection V
Francis Berghmans; Anna G. Mignani, Editor(s)

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