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Proceedings Paper

Dependence of optical absorption spectra of the flat double nanoheterostructures Al1-xGaxN/GaN/Al1-xGaxN from their thickness and concentration
Author(s): Oleksandr V. Derevyanchuk; Denys V. Kondryuk; Valeriy M. Kramar
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Paper Abstract

The energy of ground state of electron, hole and exiton in quasi-two-dimensional semiconductor nanoheterostructure with quantum well (nanofilm) are calculated by using the dielectric continuum model, approximation of effective masses and Green’s function method. Dependence of these energies on nanofilms thickness and barrier material composition have been studied taken into account effects of quantum confinement, self-polarization of the heterojunction planes and interaction with warious branches of optical phonons in such nanohetrostructures. Specific calculation was made for nanofilm GaN embedded in barrier material AlxGa1-xN, both of him have wurtzite-type structure. It has been studied on this base the influence of changes of nanofilm thickness and barrier material composition on the spectral location the electron absorption edge and exciton peaks in such nanoheterostructures. The results of this study may be of practical interest, since excitons provide a sensitive indicator of material quality.

Paper Details

Date Published: 18 January 2018
PDF: 6 pages
Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 1061219 (18 January 2018); doi: 10.1117/12.2305437
Show Author Affiliations
Oleksandr V. Derevyanchuk, Yuriy Fedkovych Chernivtsi National State Univ. (Ukraine)
Denys V. Kondryuk, Yuriy Fedkovych Chernivtsi National State Univ. (Ukraine)
Valeriy M. Kramar, Yuriy Fedkovych Chernivtsi National State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 10612:
Thirteenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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