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Proceedings Paper

Carrier concentration and transport in Be-doped InAsSb for infrared sensing applications
Author(s): Lilian K. Casias; Christian P. Morath; Elizabeth H. Steenbergen; Preston T. Webster; Jin K. Kim; Vincent M. Cowan; Ganesh Balakrishnan; Sanjay Krishna
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Paper Abstract

Accurate p-type doping of the active region in III-V infrared detectors is essential for optimizing the detector design and overall performance. While most III-V detector absorbers are n-type (e.g., nBn), the minority carrier devices with p-type absorbers would be expected to have relatively higher quantum efficiencies due to the higher mobility of their constituent minority carrier electrons. However, correctly determining the hole carrier concentration in narrow bandgap InAsSb may be challenging due to the potential for electron accumulation at the surface of the material and at its interface with the layer grown directly below it. Electron accumulation layers form high conductance electron channels that can dominate both resistivity and Hall-effect transport measurements. Therefore, to correctly determine the bulk hole concentration and mobility, temperature- and magnetic-field-dependent transport measurements in conjunction with Multi-Carrier Fit analysis were utilized on a series of p-doped InAs0.91Sb0.09 samples on GaSb substrates. The resulting hole concentrations and mobilities at 77 K (300 K) were 1.6 x 1018 cm-3 (2.3 x 1018 cm-3) and 125 cm2 V-1 s-1 (60 cm2 V-1 s-1), respectively, compared with the intended Be-doping of ~2 x 1018 cm-3.

Paper Details

Date Published: 21 May 2018
PDF: 8 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240M (21 May 2018); doi: 10.1117/12.2305431
Show Author Affiliations
Lilian K. Casias, The Univ. of New Mexico (United States)
Christian P. Morath, Air Force Research Lab. (United States)
Elizabeth H. Steenbergen, Air Force Research Lab. (United States)
Preston T. Webster, Air Force Research Lab. (United States)
Jin K. Kim, Sandia National Labs. (United States)
Vincent M. Cowan, Air Force Research Lab. (United States)
Ganesh Balakrishnan, The Univ. of New Mexico (United States)
Sanjay Krishna, The Ohio State Univ. (United States)

Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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