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Numerical simulation of passivated long-wave IR HgCdTe surfaces and their effect on detector performance
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Paper Abstract

Although HgCdTe imagers are a well-established technology, photodetectors fabricated using the same process still yield a large variation in their performance characteristics, largely stemming from hard-to-control pecu- liarities at the interface between the surface passivation and the active region of each photodiode. This work investigates the dark current characteristics of long-wave IR (cutoff wavelength of 10um) Hg0.774Cd0.226Te mesa photodiodes, which have been passivated with a CdTe film. We use a 2-D model of a p-on-n device structure to study how interface states and Cadmium diffusion at the passivation interface can influence the photodiode dark current.

Paper Details

Date Published: 14 May 2018
PDF: 10 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106240T (14 May 2018); doi: 10.1117/12.2305127
Show Author Affiliations
Ilya Prigozhin, Boston Univ. (United States)
Andreu Glasmann, Boston Univ. (United States)
Enrico Bellotti, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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