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Numerical and analytical modeling of bulk and surface generation recombination currents in InGaAs/InP SWIR photodiodes
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Paper Abstract

Understanding the failure mechanisms in high performance detector arrays is critical for meeting the demands for a given application. For SWIR sensing, the detector requires the highest sensitivity possible to operate under photon-starved conditions. Using a 3D drift-diffusion model, we simulate the influence of heterointerface traps on the dark current in In0:53Ga0:47As / InP p-on-n planar heterojunction photodiodes. We calculate how the dark current changes with junction area, and show that it increases linearly with junction radius when the device is limited by surface recombination. An analytical model is developed to understand the geometric dependence of both bulk and surface generation/recombination currents. Finally, insight on mitigation strategies and possible impact on quantum efficiency are both discussed.

Paper Details

Date Published: 9 May 2018
PDF: 11 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 1062407 (9 May 2018); doi: 10.1117/12.2305102
Show Author Affiliations
Andreu Glasmann, Boston Univ. (United States)
Enrico Bellotti, Boston Univ. (United States)


Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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