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Proceedings Paper

Prospects of In/CdTe X- and γ-ray detectors with MoO Ohmic contacts
Author(s): Olena L. Maslyanchuk; Mykhailo M. Solovan; Eduard V. Maistruk; Viktor V. Brus; Pavlo D. Maryanchuk; Volodymyr A. Gnatyuk; Toru Aoki
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Paper Abstract

The present paper analyzes the сharge transport mechanisms and spectrometric properties of In/CdTe/MoOx heterojunctions prepared by magnetron sputtering of indium and molybdenum oxide thin films onto semi-insulating p-type single-crystal CdTe semiconductor, produced by Acrorad Co. Ltd. Current-voltage characteristics of the detectors at different temperatures were investigated. The charge transport mechanisms in the heterostructures under investigation were determined: the generation-recombination in the space charge region (SCR) at relatively low voltages and the space charge limited currents at high voltages. The spectra of 137Cs and 241Am isotopes taken at different applied bias voltages are presented. It is shown that the In/CdTe/MoOx structures can be used as X/γ-ray detectors in the spectrometric mode.

Paper Details

Date Published: 18 January 2018
PDF: 6 pages
Proc. SPIE 10612, Thirteenth International Conference on Correlation Optics, 106120V (18 January 2018); doi: 10.1117/12.2305085
Show Author Affiliations
Olena L. Maslyanchuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Mykhailo M. Solovan, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Eduard V. Maistruk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Viktor V. Brus, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Institute for Silicon Photovoltaics (Germany)
Pavlo D. Maryanchuk, Yuriy Fedkovych Chernivtsi National Univ. (Ukraine)
Volodymyr A. Gnatyuk, V.E. Lashkaryov Institute of Semiconductor Physics (Ukraine)
Shizuoka Univ. (Japan)
Toru Aoki, Shizuoka Univ. (Japan)


Published in SPIE Proceedings Vol. 10612:
Thirteenth International Conference on Correlation Optics
Oleg V. Angelsky, Editor(s)

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