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Proceedings Paper

Physical device modeling of Si/Si1-xGex multi-quantum well detector to optimize Ge content for higher thermal sensitivity
Author(s): Atia Shafique; Shahbaz Abbasi; Omer Ceylan; Canan B. Kaynak; Mehmet Kaynak; Yasar Gurbuz
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Paper Abstract

This paper presents the physical device modeling of a Si/Si1-xGex multi-quantum well (MQW) detector to optimize the Ge content in the Si/Si1-xGex well required to enhance thermal sensitivity for a potential microbolometer application. The modeling approach comprises a self-consistent coupled Poisson-Schroedinger solution in series with the thermionic emission theory at the Si/Si1-xGex heterointerface and quantum confinement within the Si/Si1-xGex MQW. The integrated simulation environment developed in Sentauruas WorkBench (SWB) TCAD is employed to investigate the transfer characteristics of the device consisting three stacks of Si/Si1-xGex wells with an active area of 17μm x 17μm were investigated and compared with experiment data.

Paper Details

Date Published: 29 May 2018
PDF: 6 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241A (29 May 2018); doi: 10.1117/12.2305003
Show Author Affiliations
Atia Shafique, Sabanci Univ. (Turkey)
Shahbaz Abbasi, Sabanci Univ. (Turkey)
Omer Ceylan, Sabanci Univ. (Turkey)
Canan B. Kaynak, IHP GmbH (Germany)
Mehmet Kaynak, Sabanci Univ. (Turkey)
IHP GmbH (Germany)
Yasar Gurbuz, Sabanci Univ. (Turkey)

Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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