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Proceedings Paper

High resolution 3D imaging of integrated circuits by x-ray ptychography
Author(s): Michal Odstrcil; Mirko Holler; Jorg Raabe; Manuel Guizar-Sicairos
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Paper Abstract

Significant advances in lithography and chip manufacturing in recent years have resulted in new challenges in metrology of electronic microdevices. Manufacturing process for the 10 nm node is already available and in combination with complex three-dimensional structured interconnections, there is a lack of methods for verification that the final products correspond to the original specifications. X-ray ptycho-tomography is a locally nondestructive imaging method that could potentially help to fill the gap between electron microscopy and conventional X-ray tomography. Quantitativeness of ptycho-tomography provides detailed device geometries and corresponding sensitivity to elemental composition through the complex-valued refractive index. In order to tackle the experimental challenges and improve the imaging quality, new computational methods need to be developed for both ptychography and tomography that can account for a wide range of imperfections such as sample drifts, illumination changes or sample changes during the scan. Here, we will mention the most important of them and possible ways how to deal with them.

Paper Details

Date Published: 14 May 2018
PDF: 8 pages
Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 106560U (14 May 2018); doi: 10.1117/12.2304835
Show Author Affiliations
Michal Odstrcil, Paul Scherrer Institut (Switzerland)
Mirko Holler, Paul Scherrer Institut (Switzerland)
Jorg Raabe, Paul Scherrer Institut (Switzerland)
Manuel Guizar-Sicairos, Paul Scherrer Institut (Switzerland)


Published in SPIE Proceedings Vol. 10656:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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