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First demonstration of gate voltage-less chemical vapour deposition graphene for non-vacuum thermoelectric study
Author(s): Li Lynn Shiau; Xingli Wang; Simon Chun Kiat Goh; Kailiang Chuan; Henrik Ernst; Beng Kang Tay
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Paper Abstract

Graphene has been well studied to be an excellent thermoelectric (TE) material of choice for thermal detection. It is widely considered a key enabler for next-in-class infrared (IR) detectors given its superb carrier mobility, sensitivities and broadband absorption in far-IR range surpassing that of current thermopiles. Normally, TE studies are conducted using graphene exfoliated from graphite crystal. It is then transferred onto Si/SiO2 substrate and fabricated into Hall bar configuration with microheater at one end. A gate voltage (Vg) is passed through the substrate and the response is examined in vacuum condition. By tuning the Vg, one can possibly obtain different thermoelectric power (TEP) values. The challenge is to maintain optimum Vg for the TE device to function which requires higher power consumption. This translate to the need for additional power supply. In this report, we proposed CVDG as TE material. Typically, CVDG are synthesized on Cu film and eventually transferred onto Si/SiO2 substrate. The benefit of CVDG is that it is large area, relatively inexpensive and does not require a Vg with associated circuitry. For the first time, CVDG system was extended to nonvacuum condition to simulate open detector system where detector is exposed to sensing environment. Average TEP was measured to be 168μV/K at 298K. Moreover, CVDG is tested to be stable in air over several months with little or no decrease in performance. A comprehensive characterization between exfoliated and CVDG will be presented. In addition, measurement results for vacuum and non-vacuum detector mode will be compared as well.

Paper Details

Date Published: 14 May 2018
PDF: 6 pages
Proc. SPIE 10656, Image Sensing Technologies: Materials, Devices, Systems, and Applications V, 106561V (14 May 2018); doi: 10.1117/12.2304794
Show Author Affiliations
Li Lynn Shiau, Nanyang Technological Univ. (Singapore)
Excelitas Technologies Corp. (Singapore)
Xingli Wang, Nanyang Technological Univ. (Singapore)
Simon Chun Kiat Goh, Nanyang Technological Univ. (Singapore)
Excelitas Technologies Corp. (Singapore)
Kailiang Chuan, Excelitas Technologies Corp. (United States)
Henrik Ernst, Excelitas Technologies Corp. (United States)
Beng Kang Tay, Nanyang Technological Univ. (Singapore)


Published in SPIE Proceedings Vol. 10656:
Image Sensing Technologies: Materials, Devices, Systems, and Applications V
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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