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A FEA study on thermal stress of HgCdTe infrared focal plane arrays detector
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Paper Abstract

The infrared focal plane arrays detector is a multilayer structure which is mainly composed of detector chip, Si-ROIC, and fan out layer. In view of the different thermal expansion coefficients between the material layers, considerable thermal stress will be generated in this device among the cooling cycle which could lead to physical breakdown of the chip under extreme circumstances. Models of finite element analysis (FEA) were established to explore the thermal stress of HgCdTe infrared focal plane devices at low temperature. According to the characteristics of the expansion alloy, the two kinds of focal plane device structures were simulated: one is that with invar layer below the Al2O3 piece, the other is that kovar layer between the Si-ROIC and Al2O3 pieces. Both of them can reduce the thermal stress effectively, and improve the reliability of IRFPAs detector.

Paper Details

Date Published: 18 June 2018
PDF: 6 pages
Proc. SPIE 10624, Infrared Technology and Applications XLIV, 106241X (18 June 2018); doi: 10.1117/12.2304576
Show Author Affiliations
W. T. Zhang, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Z. H. Ye, Shanghai Institute of Technical Physics (China)
X. Chen, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 10624:
Infrared Technology and Applications XLIV
Bjørn F. Andresen; Gabor F. Fulop; Charles M. Hanson; John Lester Miller; Paul R. Norton, Editor(s)

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