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Theoretical investigation of electro-absorption in strain compensated Tin doped group IV alloy based quantum well
Author(s): Prakash Pareek; Lokendra Singh; Nishit Malviya; Jitendra K. Mishra
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Paper Abstract

This paper focus on the theoretical investigation of quantum confined Stark effect (QCSE) in strain compensated SiGeSn/GeSn single quantum well (QW). Eigen energies in presence of electric field, for Г valley conduction band (Г- CB) and heavy hole band (HH)) are obtained from the self consistent solution of coupled Schrödinger and Poisson equations by finite difference method. Absorption coefficient considering excitonic effect for direct transition of HH band to Г valley is calculated. A significant shift in absorption peak towards longer wavelengths is observed.

Paper Details

Date Published: 4 May 2018
PDF: 6 pages
Proc. SPIE 10672, Nanophotonics VII, 1067223 (4 May 2018); doi: 10.1117/12.2304310
Show Author Affiliations
Prakash Pareek, Vaagdevi College of Engineering (India)
Lokendra Singh, DIT Univ. (India)
Nishit Malviya, Indian Institute of Technology (ISM) Dhanbad (India)
Jitendra K. Mishra, BIT Mesra (India)


Published in SPIE Proceedings Vol. 10672:
Nanophotonics VII
David L. Andrews; Angus J. Bain; Jean-Michel Nunzi; Andreas Ostendorf, Editor(s)

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