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Proceedings Paper

MMICs using InP based hemts for high gain, low noise, low dc power consumption microwave and millimeter-wave systems
Author(s): Huei Wang
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Paper Abstract

This paper presents the development of various MMICs ranging from 1 to 100 GHz using 0.1 jim gate- length pseudomorphic AlInAsfinGaAs/InP HEMT technology. These InP-based HEMT MMICs have distinct advantages in high gain, low noise and low dc power consumption over the GaAs-based HEMT MMICs. The InP HEMT device characteristics, MMIC design and performance are discussed.

Paper Details

Date Published: 30 November 2017
PDF: 3 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508M (30 November 2017); doi: 10.1117/12.2303327
Show Author Affiliations
Huei Wang, Electronic Technology Division (United States)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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