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Proceedings Paper

V-band monolithic pseudomorphic HEMT phased array components
Author(s): G. L. Lan
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Paper Abstract

Recent advances in pseudomorphic HEMS' (PHEMT) MMIC technology have made it the preferred candidate fo?r high performance millimeter-wave components for phased array applications. This paper will describe the development of V-band PHEMT/MMIC components including power amplifiers and phase shifters. For the single-stage MMIC power amplifier employing a 2(X) 14m PHEMT, we achieved 151.4 mW output power (757.0 mW/mm) with 26.4 % power-added efficiency at 60 GHz. three-stage MMIC amplifier utilizing the same devices demonstrated 80 mW output power, 20.5 % power-added efficiency, and 17 dB associated gain at 57 GHz. And, for the phase shifter, a four-bit phase shifter with less than 8 dB insertion loss from 61 to 63 Olin has been achieved.

Paper Details

Date Published: 30 November 2017
PDF: 1 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22508I (30 November 2017); doi: 10.1117/12.2303323
Show Author Affiliations
G. L. Lan, GaAs Operations (United States)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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