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Proceedings Paper

V-band monolithic integrated circuits for personal communication terminals
Author(s): M. Funabashi
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Paper Abstract

A single-stage millimeter-wave high gain wide band MMIC amplifier and an MMIC oscillator at V-band have been successfully fabricated based on 0.15pm T-shaped gate GaAs based heterojunction FETs (HJFETs) technology. The single- stage amplifier exhibits 7.2±1.0dB of gain and 15.3dBm output power at 3dB compression point with a 49-61GHz range. The MMIC oscillator shows 51GHz oscillation with 2.5dBm of the output power.

Paper Details

Date Published: 30 November 2017
PDF: 2 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22507X (30 November 2017); doi: 10.1117/12.2303302
Show Author Affiliations
M. Funabashi, Advanced Millimeter Wave Technologies Co., Ltd. (Japan)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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