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Proceedings Paper

Photoelectric properties of (n)InSb-(n)GaAs thin-film heterojunctions, and InAs1-xSbx thin layers obtained by laser-pulse deposition method
Author(s): A. G. Alexanian
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Paper Abstract

Using the laser-pulse deposition (LPD) method, thin-film hetero- junctions (HJ) (n)InSb-(n)GaAs mismatched by the lattice parameter (--13%) were obtained and analyzed, as well as the thin layers (0.1 to 0.5 pm) of semiconductor solid solution InAs..... Sb 1 ..

Paper Details

Date Published: 1 January 1994
PDF: 2 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225078 (1 January 1994); doi: 10.1117/12.2303277
Show Author Affiliations
A. G. Alexanian, Institute of Radiophysics and Electronics (Armenia)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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