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Proceedings Paper

Low- frequency phenomena in semiconductors in high-frequency em and constant magnetic fields
Author(s): F. G. Bass
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Paper Abstract

Using the modified Kapitsa's calculating scheme the motion of the particle with arbitrary dispersion relation under the action of high- frequency wave pumping field can be described in the terms of effective hamiltonian. Pumping leads to the effective spatial modulation of the dispersion relation. It results in the unusual electron properties. Strong dynamic localization, selective sensibility to stochastizing excitation and phase transformation metal-dielectric are described for semiconductor with 1D quantum superlattice.

Paper Details

Date Published: 1 January 1994
PDF: 2 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225075 (1 January 1994); doi: 10.1117/12.2303274
Show Author Affiliations
F. G. Bass, Institute of Radiophysics and Electronics (Ukraine)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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