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Proceedings Paper

Nonlinear submillimeter and infrared absorption in semiconductors
Author(s): A. R. Shabaev
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Paper Abstract

A theory of the nonlinear submillimeter and infrared absorption in semiconductors is devel- oped. The absorption is caused by the intraband transitions of holes. The theory allows to estimate the threshold intensities of the coherence and incoherence mechanisms of absorption saturation. The influence of weak electric (andjor magnetic) field and charged impurities is considered.

Paper Details

Date Published: 1 January 1994
PDF: 1 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225074 (1 January 1994); doi: 10.1117/12.2303273
Show Author Affiliations
A. R. Shabaev, Ioffe Institute (Russian Federation)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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