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Proceedings Paper

Improved conductivity-measurement of semiconductor epitaxial layers by means of the contactless microwave method
Author(s): P. Boege
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Paper Abstract

Measurements and calculations of the scattering-characteristics of stratified lossy dielectric blocks completely filling a waveguide cross section are presented. The method is used for contactless con- ductivity measurements of MBE-grown II-VI semiconductor layers.

Paper Details

Date Published: 1 January 1994
PDF: 2 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225072 (1 January 1994); doi: 10.1117/12.2303271
Show Author Affiliations
P. Boege, Physikalisches Institut der Univ. (Germany)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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