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Proceedings Paper

Low compensation impurity band photoconductors
Author(s): S. Pasquier
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Paper Abstract

The present study of silicon based impurity band photoconductors evolves from the development of a space borne instrument for spectroscopy of the atmosphere using far infrared thermal emission of relevant molecular species1 in the spectral range 80 to 400 cm-1. Actually, the spectral range from 200 to 400 cm-1 in which, for example, the key N205 molecule has a strong signature, is not well covered by the standard available Beryllium doped Germanium (Ge:Be) photoconductors which suffer from poor quantum efficiency in this region.. They are also quite sensitive to cosmic ray particles due to their large volume. In addition, only a few different materials are available because of the difficult crystal growth process.

Paper Details

Date Published: 1 January 1994
PDF: 1 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 225070 (1 January 1994); doi: 10.1117/12.2303269
Show Author Affiliations
S. Pasquier, LPST-SNCMP (France)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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