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Proceedings Paper

Research of vme photosensitive detector
Author(s): Changchun Zhu
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Paper Abstract

The negative-affinity condition means that electrons at the bottom of the conduction band have more energy than free electrons just outside the surface. Such a condition has been obtained on several semiconductors, and is usually achieved by cleaning the surface under high vacuum and treating it with cesium, and sometimes oxygen. The structure of dc forward GaAs p-n junction emitter is shown in Figl, whose p-surface is activated to a state of negative electron affinity (NEA). When the junction is forward biased, electrons are injected into the p-region, as shown in Fig2. They diffuse to the surface and can be emitted into the vacuum.E1H23

Paper Details

Date Published: 1 January 1994
PDF: 2 pages
Proc. SPIE 2250, International Conference on Millimeter and Submillimeter Waves and Applications 1994, 22504H (1 January 1994); doi: 10.1117/12.2303178
Show Author Affiliations
Changchun Zhu, Xi'an Jiaotong Univ. (China)


Published in SPIE Proceedings Vol. 2250:
International Conference on Millimeter and Submillimeter Waves and Applications 1994
Mohammed N. Afsar, Editor(s)

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