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Proceedings Paper • new

III-V-on-silicon heterogeneously integrated lasers (Conference Presentation)
Author(s): Gunther Roelkens
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Paper Abstract

In this paper we describe our work on heterogeneously integrated laser diodes on a silicon photonics platform. Different types of laser diodes are presented, different both in terms of wavelength / material platform (850 nm, 1550nm, 2000nm, 2300nm) as well as laser geometry. The integration of the III-V semiconductor materials on the silicon photonic integrated circuits is realized through adhesive die-to-wafer bonding. We will report on the realization of hybrid 850 nm VCSELs and high-speed directly and externally modulated lasers, mode-locked lasers and tunable lasers in the C-band. We also discuss our work on single wavelength laser arrays and tunable lasers in the 2um wavelength range. These integrated laser sources complete the toolkit for silicon photonics enabling highly integrated solutions for optical communication and sensing applications.

Paper Details

Date Published: 23 May 2018
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Proc. SPIE 10682, Semiconductor Lasers and Laser Dynamics VIII, 106820T (23 May 2018); doi: 10.1117/12.2302954
Show Author Affiliations
Gunther Roelkens, Univ. Gent IMEC (Belgium)


Published in SPIE Proceedings Vol. 10682:
Semiconductor Lasers and Laser Dynamics VIII
Krassimir Panajotov; Marc Sciamanna; Rainer Michalzik, Editor(s)

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