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Proceedings Paper

The effect of tungsten on the properties of gold-doped silicon
Author(s): S. I. Rasmagin; V. I. Krasovskii; V. V. Zuev; M. A. Kononov; I. N. Feofanov; M. A. Kazaryan
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Paper Abstract

The effect of the tungsten coating on the photoelectric and electrophysical properties of electron-silicon samples after gold diffusion was analyzed. The trap levels associated with tungsten atoms, with a tungsten complex + vacancy, and with an oxygen + vacancy complex were detected. In samples of silicon doped with gold, both with and without a tungsten coating, the resistivity increased by 2-3 orders of magnitude, which indicates the creation of additional energy centers associated with gold and gold complexes caused by tungsten. At the same time, the time of nonstationary relaxation photoconductivity has greatly decreased, which also indicates the creation of additional recombination centers and trap levels.

Paper Details

Date Published: 16 April 2018
PDF: 4 pages
Proc. SPIE 10614, International Conference on Atomic and Molecular Pulsed Lasers XIII, 106140O (16 April 2018); doi: 10.1117/12.2302949
Show Author Affiliations
S. I. Rasmagin, Prokhorov General Physics Institute (Russian Federation)
V. I. Krasovskii, Prokhorov General Physics Institute (Russian Federation)
National Research Nuclear Univ. (Russian Federation)
V. V. Zuev, National Research Nuclear Univ. (Russian Federation)
M. A. Kononov, Prokhorov General Physics Institute (Russian Federation)
I. N. Feofanov, P.N.Lebedev Physical Institute (Russian Federation)
M. A. Kazaryan, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 10614:
International Conference on Atomic and Molecular Pulsed Lasers XIII
Andrei M. Kabanov; Victor F. Tarasenko, Editor(s)

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