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Proceedings Paper

Tin-gallium-oxide-based UV-C detectors
Author(s): Partha Mukhopadhyay; Mykyta Toporkov; Winston V. Schoenfeld
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Paper Abstract

The emergence of conductive gallium oxide single crystal substrates offers the potential for vertical Schottky detectors operating in the UV-C spectral region. We report here on our recent work in the development of Tin Gallium oxide (TGO) thin film metal-semiconductor-metal (MSM) and Schottky detectors using plasma-assisted molecular beam epitaxy on c plane sapphire and bulk Ga2O3 substrates. Tin alloying of gallium oxide thin films was found to systematically reduce the optical band gap of the compound, providing tunability in the UV-C spectral region. Tin concentration in the TGO epilayers was found to be highly dependent on growth conditions, and Ga flux in particular. First attempts to demonstrate vertical Schottky photodetectors using TGO epilayers on bulk n-type Ga2O3 substrates were successful. Resultant devices showed strong photoresponse to UV-C light with peak responsivities clearly red shifted in comparison to Ga2O3 homoepitaxial Schottky detectors due to TGO alloying.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330V (23 February 2018); doi: 10.1117/12.2302729
Show Author Affiliations
Partha Mukhopadhyay, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
BRIDG (United States)
Mykyta Toporkov, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
Winston V. Schoenfeld, CREOL, The College of Optics and Photonics, Univ. of Central Florida (United States)
BRIDG (United States)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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