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Proceedings Paper

Mask lithographic performance investigation with computational Monte-Carlo method on advanced mask patterning
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Paper Abstract

As semiconductor features shrink in dimension and pitch, the excessive control of critical-dimension uniformity (CDU) and pattern fidelity is essential for mask manufacturing using electron-beam lithography. Requirements of the electronbeam shot quality affected by shot unsteadiness become more important than before for the advanced mask patterning. Imperfect electron optical system, an inaccurate beam deflector, and imprecise mask stage control are mainly related to the shot unsteadiness including positioning and dose perturbations. This work extensively investigates impacts of variable shaped beam dose and positioning perturbations on local CDU using Monte Carlo simulation for various mask contrast enhancement approaches. In addition, the relationship between the mask lithographic performance and the shot count number correlated with mask writing time is intensively studied.

Paper Details

Date Published: 19 March 2018
PDF: 10 pages
Proc. SPIE 10584, Novel Patterning Technologies 2018, 105841E (19 March 2018); doi: 10.1117/12.2302685
Show Author Affiliations
Chun-Hung Liu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shih-Ming Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Hua Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Wen Lo, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Hsin-Wei Wu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chien-Cheng Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Alex Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shuo-Yen Chou, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ru-Gun Liu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 10584:
Novel Patterning Technologies 2018
Eric M. Panning, Editor(s)

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