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Proceedings Paper • Open Access

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range
Author(s): P. Bhattacharya; A. Hazari; S. Jahangir

Paper Abstract

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs ~10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Paper Details

Date Published: 19 February 2018
PDF: 10 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 1055302 (19 February 2018); doi: 10.1117/12.2302548
Show Author Affiliations
P. Bhattacharya, Univ. of Michigan (United States)
A. Hazari, Univ. of Michigan (United States)
S. Jahangir, Univ. of Michigan (United States)


Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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