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A review of the growth, doping, and applications of Beta-Ga2O3 thin films
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Paper Abstract

β-Ga2O3 is emerging as an interesting wide band gap semiconductor for solar blind photo detectors (SBPD) and high power field effect transistors (FET) because of its outstanding material properties including an extremely wide bandgap (Eg ~4.9eV) and a high breakdown field (8 MV/cm). This review summarizes recent trends and progress in the growth/doping of β-Ga2O3 thin films and then offers an overview of the state-of-the-art in SBPD and FET devices. The present challenges for β-Ga2O3 devices to penetrate the market in real-world applications are also considered, along with paths for future work.

Paper Details

Date Published: 14 March 2018
PDF: 24 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330R (14 March 2018); doi: 10.1117/12.2302471
Show Author Affiliations
Manijeh Razeghi, Northwestern Univ. (United States)
Ji-Hyeon Park, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Dimitris Pavlidis, Boston Univ. (United States)
Ferechteh H. Teherani, Nanovation (France)
David J. Rogers, Nanovation (France)
Brenden A. Magill, Virginia Polytechnic Institute and State Univ. (United States)
Giti A. Khodaparast, Virginia Polytechnic Institute and State Univ. (United States)
Yaobin Xu, Northwestern Univ. (United States)
Jinsong Wu, Northwestern Univ. (United States)
Vinayak P. Dravid, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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