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Proceedings Paper

CCD-based thermoreflectance imaging of high-power diode lasers with back-irradiance
Author(s): Chen Li; Kevin P. Pipe; Chuanshun Cao; Prabhu Thiagarajan; Robert J. Deri; Paul O. Leisher
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Paper Abstract

The two-dimensional (2D) temperature profile of a high-power junction-down broad-area diode laser facet subject to back-irradiance (BI) is studied via CCD-based thermoreflectance (TR) imaging and finite element modeling. The temperature rise in the active region (ΔΤAR) is determined at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations. Interestingly, our study shows that ΔΤAR rises sharpest not when the back-irradiance is boresight-aligned with the active region but rather when it is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). At this critical location, ΔΤAR is found to increase by nearly a factor of three compared to its increase without back-irradiance. This provides insight on an important location for back-irradiance that may be correlated with catastrophic optical damage (COD) for diode lasers fabricated on absorbing substrates, and also suggests a thermal basis for truncated lifetime and deegraded performance for diode lasers experiencing backirradiance.

Paper Details

Date Published: 4 May 2018
PDF: 8 pages
Proc. SPIE 10637, Laser Technology for Defense and Security XIV, 106370C (4 May 2018); doi: 10.1117/12.2302434
Show Author Affiliations
Chen Li, Univ. of Michigan (United States)
Kevin P. Pipe, Univ. of Michigan (United States)
Chuanshun Cao, Lasertel, Inc. (United States)
Prabhu Thiagarajan, Lasertel, Inc. (United States)
Robert J. Deri, Lawrence Livermore National Lab. (United States)
Paul O. Leisher, Lawrence Livermore National Lab. (United States)


Published in SPIE Proceedings Vol. 10637:
Laser Technology for Defense and Security XIV
Mark Dubinskiy; Timothy C. Newell, Editor(s)

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