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Proceedings Paper

Far infrared photo-hall experiments on shallow donor transitions in n-GaAs
Author(s): J. Burghoorn
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Paper Abstract

The number (n) and mobility (μ) of the photo-created conduction electrons for several shallow donor transitions in high mobility n-GaAs have been studied as a function of FIR power and temperature. Both n and μ depend on the FIR power. The obvious consequences for the usual analysis of time-resolved and saturation experiments of FIR induced conductivity σ, where always a constant value for μ is assumed, will be discussed.

Paper Details

Date Published: 1 December 1990
PDF: 3 pages
Proc. SPIE 1514, 15th International Conference on Infrared and Millimeter Waves, 151430 (1 December 1990); doi: 10.1117/12.2301518
Show Author Affiliations
J. Burghoorn, Univ. of Leiden (Netherlands)


Published in SPIE Proceedings Vol. 1514:
15th International Conference on Infrared and Millimeter Waves
Richard J. Temkin, Editor(s)

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