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Proceedings Paper

Bulk crystal growth of Ga2O3
Author(s): Akito Kuramata; Kimiyoshi Koshi; Shinya Watanabe; Yu Yamaoka; Takekazu Masui; Shigenobu Yamakoshi
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Paper Abstract

This paper describes the bulk crystal growth of β-Ga2O3 using edge-defined film-fed growth (EFG) process. We first describe the method of the crystal growth and show that large-size crystal with width of up to 6 inch can be grown. Then, we discuss the way to control electrical properties. In the discussion, we give some experimental results of residual impurity measurement, intentional doping using Si and Sn for n-type doping and Fe for insulating doping.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10533, Oxide-based Materials and Devices IX, 105330E (23 February 2018); doi: 10.1117/12.2301405
Show Author Affiliations
Akito Kuramata, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)
Kimiyoshi Koshi, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)
Shinya Watanabe, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)
Yu Yamaoka, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)
Takekazu Masui, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)
Shigenobu Yamakoshi, Novel Crystal Technology, Inc. (Japan)
Tamura Corp. (Japan)


Published in SPIE Proceedings Vol. 10533:
Oxide-based Materials and Devices IX
David J. Rogers; David C. Look; Ferechteh H. Teherani, Editor(s)

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