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Proceedings Paper

Radiation effects of various electro-optic devices
Author(s): Alvin S. Kanofsky
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Paper Abstract

We have measured the effects of radiation on various electro-optical devices used as communication components. The measurements were performed with 2.5 MeV electrons from the Lehigh University Van de Graaff. The performance of the devices was monitored both during irradiation and after irradiation. We report here the results of irradiation on various electro-optical devices used for optical communications. These devices include simple waveguide couplers, optical waveguide switching devices, transistors, and total amplifier systems. The 3 MeV High Voltage KN3000 Van de Graaff at Lehigh University was used for the irradiations. The machine provided beams of electrons which could be directly used or gamma rays from the electron beam bremsstrahlung. We looked for slowly changing time effects using a continuous beam as well as transient effects with a pulsed beam arrangement. We now review the results obtained with various electro-optical components.

Paper Details

Date Published: 15 January 1996
PDF: 14 pages
Proc. SPIE 2611, Optical Network Engineering and Integrity, (15 January 1996); doi: 10.1117/12.230117
Show Author Affiliations
Alvin S. Kanofsky, Lehigh Univ. (United States)

Published in SPIE Proceedings Vol. 2611:
Optical Network Engineering and Integrity
Hakan H. Yuce; Dilip K. Paul; Roger A. Greenwell, Editor(s)

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