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Proceedings Paper

High-reliability nonhermetic 1.3-um InP-based uncooled lasers
Author(s): Naresh Chand; John W. Osenbach; T. L. Evanosky; Robert B. Comizzoli; Won-Tien Tsang
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Paper Abstract

We report the first uncooled non-hermetic 1.3 micrometer InP-based communication lasers that have reliability comparable to their hermetically packaged counterparts for possible applications in fiber in the loop and cable TV. The development of reliable non-hermetic semiconductor lasers would not only lead to the elimination of the costs specifically associated with hermetic packaging but also lead the way for possible revolutionary low cost optoelectronic packaging technologies. We have used Fabry-Perot capped mesa buried heterostructure (CMBH) uncooled lasers with both bulk and MQW active regions grown on n- type InP substrates by VPE and MOCVD. We find that the proper dielectric facet passivation is the key to obtain high reliability in a non-hermetic environment. The passivation protects the laser from the ambient and maintains the proper facet reflectivity to achieve desired laser characteristics. The SiO facet passivation formed by molecular beam deposition (MBD) has resulted in lasers with lifetime well in excess of the reliability goal of 3,000 hours operation at 85 degrees Celsius/90% RH/30 mA aging condition. Based on extrapolations derived experimentally, we calculate a 15 year average device hazard rate of less than 300 FITs (as against the desired 1,500 FITs) for the combination of thermal and humidity induced degradation at an ambient condition of 45 degrees Celsius/50% RH. For comparison, the average hazard rate at 45 degrees Celsius and 15 years of service is approximately 250 FITs for hermetic lasers of similar construction. A comparison of the thermal only degradation (hermetic) to the thermal plus humidity induced degradation (non-hermetic) indicates that the reliability of these nonhermetic lasers is controlled by thermal degradation only and not by moisture-induced degradation. In addition to device passivation for a non-hermetic environment, MBD-SiO maintains the optical, electrical and mechanical properties needed for high-performance laser systems.

Paper Details

Date Published: 15 January 1996
PDF: 13 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230091
Show Author Affiliations
Naresh Chand, AT&T Bell Labs. (United States)
John W. Osenbach, AT&T Bell Labs. (United States)
T. L. Evanosky, AT&T Bell Labs. (United States)
Robert B. Comizzoli, AT&T Bell Labs. (United States)
Won-Tien Tsang, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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