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Proceedings Paper

Chaotic instabilities in modulated external-cavity semiconductor lasers
Author(s): Benson C. Lam; Albert L. Kellner; Paul K. L. Yu; M. M. Sushchik; Henry D. I. Abarbanel
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Paper Abstract

Chaotic stability of external cavity semiconductor laser under modulation is examined both theoretically and experimentally. When the modulation frequency is detuned below the cavity resonant frequency, the simulations show a two-frequency to three-frequency route to chaos, as depicted by the power spectrum and time series of the laser emission at different stages of detuning. This agrees with experimental observations of 1.3 micrometer wavelength distributed feedback (DFB) laser and ridge waveguide (RW) InGaAsP laser. The phase-space attractor of both DFB and RW lasers have well-defined structures at broadband chaotic state, which signifies the presence of dynamical determinism in this state.

Paper Details

Date Published: 15 January 1996
PDF: 10 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230086
Show Author Affiliations
Benson C. Lam, Univ. of California/San Diego (United States)
Albert L. Kellner, Univ. of California/San Diego (United States)
Paul K. L. Yu, Univ. of California/San Diego (United States)
M. M. Sushchik, Univ. of California/San Diego (United States)
Henry D. I. Abarbanel, Univ. of California/San Diego (United States)


Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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