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Proceedings Paper

Demonstration of highly reliable nonhermetic planar InGaAs/InP photodiodes
Author(s): John W. Osenbach; T. L. Evanosky; Suniel B. Phatak; Robert B. Comizzoli; Naresh Chand
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Paper Abstract

Reliable non-hermetic photodiodes are expected to reduce the cost of optoelectronics used in fiber to the home and cable TV system. However, all reports to date indicate non-hermetic InGaAs/InP photodiodes do not have sufficient reliability for use in the systems. In this paper, we report the first data that conclusively shows, properly designed and manufactured non- hermetic InGaAs/InP photodiodes can be made with reliability sufficient to use in telecommunication systems. We have produced non-hermetic photodiodes whose hazard rate at 15 years of field use at 45 degrees Celsius and 50% RH is less than 100 FITs, the requirement for telecommunication systems.

Paper Details

Date Published: 15 January 1996
PDF: 10 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230075
Show Author Affiliations
John W. Osenbach, AT&T Bell Labs. (United States)
T. L. Evanosky, AT&T Bell Labs. (United States)
Suniel B. Phatak, AT&T Bell Labs. (United States)
Robert B. Comizzoli, AT&T Bell Labs. (United States)
Naresh Chand, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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