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Proceedings Paper

Integrated strained-layer photonic devices by selective area epitaxy
Author(s): James J. Coleman
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Paper Abstract

Selective-area epitaxy over a patterned dual stripe oxide mask allows the fabrication of strained-layer buried heterostructure quantum well lasers in which the quantum well thickness and, hence, emission wavelength is defined anywhere on the wafer by the stripe width and spacing. This in-plane bandgap energy control allows the designer to fabricate devices with different wavelengths on the same wafer for integrated opto-electronic applications. Since no growth occurs on the oxide mask, the spacing between stripes defines the width of the lateral optical waveguide, and the width of the stripes defines the amount of growth rate and composition enhancement in the quantum well. A very wide range of emission wavelengths (i.e. 960 - 1060 nm) can be obtained over the wafer surface in a single growth. A number of novel and high performance photonic devices have been fabricated in this manner including sub-milliampere threshold current lasers, lasers integrated with waveguides, modulators, and detectors, multiple-wavelength WDM arrays, broad-band LEDs, and redundant sources.

Paper Details

Date Published: 15 January 1996
PDF: 6 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230072
Show Author Affiliations
James J. Coleman, Univ. of Illinois/Urbana-Champaign (United States)

Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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