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Proceedings Paper

High-power, high-efficiency, and highly uniform 1.3-um uncooled InGaAsP/InP strained multiquantum-well lasers
Author(s): Keisuke Kojima; Marlin W. Focht; Joseph M. Freund; J. Michael Geary; Kenneth G. Glogovsky; Gregory D. Guth; Robert F. Karlicek Jr.; Lars C. Luther; George J. Przybylek; C. Lewis Reynolds Jr.; D. M. Romero; L. E. Smith; Daniel V. Stampone; J. W. Stayt Jr.; Venkat S. Swaminathan; Frank S. Walters; Kevin Thomas Campbell; J. A. Grenko; Jean Flamand; Michael G Palin
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Paper Abstract

In order to meet the increasing market needs for uncooled lasers for such applications as fiber- in-the-loop, high efficiency, high power, and highly reliable 1.3 micrometer uncooled InGaAsP/InP strained multi-quantum well Fabry-Perot lasers were fabricated with 50 mm wafer processing. Slope efficiency as high as 0.39 W/A and peak power as high as 46 mW at 85 degrees Celsius was obtained by optimizing the device structure for high temperature operation. We have also demonstrated excellent uniformity and reproducibility over 6 wafers. Reliability was also shown to be very good. More than 10,000 chips sites are available on a 50 mm wafer, and the cost is expected to be low. Because of the high performance, these lasers are expected to be used for various applications.

Paper Details

Date Published: 15 January 1996
PDF: 7 pages
Proc. SPIE 2610, Laser Diode Chip and Packaging Technology, (15 January 1996); doi: 10.1117/12.230070
Show Author Affiliations
Keisuke Kojima, AT&T Bell Labs. (United States)
Marlin W. Focht, AT&T Bell Labs. (United States)
Joseph M. Freund, AT&T Bell Labs. (United States)
J. Michael Geary, AT&T Bell Labs. (United States)
Kenneth G. Glogovsky, AT&T Bell Labs. (United States)
Gregory D. Guth, AT&T Bell Labs. (United States)
Robert F. Karlicek Jr., AT&T Bell Labs. (United States)
Lars C. Luther, AT&T Bell Labs. (United States)
George J. Przybylek, AT&T Bell Labs. (United States)
C. Lewis Reynolds Jr., AT&T Bell Labs. (United States)
D. M. Romero, AT&T Bell Labs. (United States)
L. E. Smith, AT&T Bell Labs. (United States)
Daniel V. Stampone, AT&T Bell Labs. (United States)
J. W. Stayt Jr., AT&T Bell Labs. (United States)
Venkat S. Swaminathan, AT&T Bell Labs. (United States)
Frank S. Walters, AT&T Bell Labs. (United States)
Kevin Thomas Campbell, AT&T Bell Labs. (United States)
J. A. Grenko, AT&T Bell Labs. (United States)
Jean Flamand, AT&T Bell Labs. (United States)
Michael G Palin, AT&T Bell Labs. (United States)


Published in SPIE Proceedings Vol. 2610:
Laser Diode Chip and Packaging Technology
Pei Chuang Chen; Tomas D. Milster, Editor(s)

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