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Proceedings Paper

Attenuation of millimeter wave in moving Gaussian spot illuminated semiconductor panel
Author(s): Mohammad H. Rahnavard; Aref Bakhtazad
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Paper Abstract

Scanning laser beam semiconductor panel can be used for conversion of millimeter waves to visual displays. For this easy and direct method of conversion, the behavior of semiconductor panel under scanning laser beam is required. Formulas for excess carriers due to moving spot of light have beam obtained. Using these formulas single path total field attenuation through semiconductor panel for scanning laser light spot excitation as a function of scanning velocity, position and laser beam width are studied.

Paper Details

Date Published: 1 November 1990
PDF: 8 pages
Proc. SPIE 1338, Optoelectronic Devices and Applications, (1 November 1990); doi: 10.1117/12.23000
Show Author Affiliations
Mohammad H. Rahnavard, Shiraz Univ. (United States)
Aref Bakhtazad, Shiraz Univ. (Canada)


Published in SPIE Proceedings Vol. 1338:
Optoelectronic Devices and Applications
Sriram Sriram, Editor(s)

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