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Proceedings Paper

How to measure a-few-nanometer-small LER occurring in EUV lithography processed feature
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Paper Abstract

For EUV lithography features we want to decrease the dose and/or energy of CD-SEM’s probe beam because LER decreases with severe resist-material’s shrink. Under such conditions, however, measured LER increases from true LER, due to LER bias that is fake LER caused by random noise in SEM image. A gap error occurs between the right and the left LERs. In this work we propose new procedures to obtain true LER by excluding the LER bias from the measured LER. To verify it we propose a LER’s reference-metrology using TEM.

Paper Details

Date Published: 13 March 2018
PDF: 4 pages
Proc. SPIE 10585, Metrology, Inspection, and Process Control for Microlithography XXXII, 1058526 (13 March 2018); doi: 10.1117/12.2299969
Show Author Affiliations
Hiroki Kawada, Hitachi High-Technologies Corp. (Japan)
Takahiro Kawasaki, Hitachi High-Technologies Corp. (Japan)
Junichi Kakuta, Hitachi High-Technologies Corp. (Japan)
Masami Ikota, Hitachi High-Technologies Corp. (Japan)
Tsuyoshi Kondo, Hitachi High-Technologies Corp. (Japan)

Published in SPIE Proceedings Vol. 10585:
Metrology, Inspection, and Process Control for Microlithography XXXII
Vladimir A. Ukraintsev, Editor(s)

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