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Proceedings Paper

A progress report on DSA of high-chi silicon containing block co-polymers (Conference Presentation)
Author(s): C. Grant Willson; Natsuko Ito; Gregory Blachut; Stephen Sirard; Yasunobu Someya; Jan Doise; Ryuta Mizuochi; Austin Lane; Geert Vandenberghe; Paulina Rincon-Delgadillo; XiaoMin Yang; Christopher Ellison

Paper Abstract

We have developed block co-polymers (BCPs) in which one of the blocks incorporates silicon and the other does not [1]. These materials provide access to BCPs with high Flory-Huggins interaction parameters (χ) and dry etch selectivity under reactive ion etching (RIE) conditions to provide Sub-20 nm patterns [2]. Recently we have investigated a hybrid chemo/grapho-epitaxy process that provides 20 nm and 10 nm full pitch patterning and we have transferred these patterns into useful substrates. This hybrid process produced 20 nm DSA with fewer defects with this material than the conventional chemo-epitaxial process. Cross-sectional scanning transmission electron microscopy (STEM) with electron energy loss spectroscopy (EELS) confirmed that the BCP features span the entire film thickness on hybrid process wafers [3]. We have now succeeded in demonstrating DSA with poly(4-methoxystyrene-block-4-trimethylsilylstyrene) (PMOST-b-PTMSS) aligned by guidelines comprised of cross linked poly(2-vinylpyridine) (Figure a). The process was demonstrated by cross-section analysis to produce features that span the entire BCP film thickness and the introduction of nitrogen into the guide line provides new evidence for the nature of the interaction between the guide lines and the BCP(Figure b). We have also reported the DSA and pattern transfer of poly(5-vinyl-1,3-benzodioxole-block-pentamethyldisilylstyrene) (PVBD-b-PDSS) at 10 nm full pitch. However, in this case, the DSA involved a trade-off between perpendicularity and dislocation defects [4]. Improved brush materials that selectively graft to an etched Cr surface rather than etched imprint resist provide oriented and aligned 5 nm line-and-space patterns that cleanly traverse the full film thickness thickness (Figure c). 1. Bates C. M., et al. Science (2012), 338 (6108), 775. 2. Azarnouchea, L., et al. J. Vac. Sci. Technol. B (2016) 34 (6), 061602/1-061602/10. 3. Blachut, G., et al. Chem. Mater (2016), 28 (24), 8951-8961. 4. Lane A. P., et al. ACS Nano (2017), 11 (8), 7656-i7665.

Paper Details

Date Published: 19 March 2018
Proc. SPIE 10586, Advances in Patterning Materials and Processes XXXV, 105860O (19 March 2018); doi: 10.1117/12.2299966
Show Author Affiliations
C. Grant Willson, The Univ. of Texas at Austin (United States)
Natsuko Ito, The Univ. of Texas at Austin (United States)
Gregory Blachut, Univ of Texas at Austin (United States)
Lam Research (United States)
Stephen Sirard, Lam Research Corp. (United States)
Yasunobu Someya, Nissan Chemical Industries, Ltd. (Japan)
Jan Doise, IMEC (Belgium)
Ryuta Mizuochi, The Univ. of Texas at Austin (United States)
Austin Lane, Univ. of Texas at Austin (United States)
Geert Vandenberghe, IMEC (Belgium)
Paulina Rincon-Delgadillo, IMEC (Belgium)
XiaoMin Yang, Seagate Technology LLC (United States)
Christopher Ellison, Univ. of Minnesota, Twin Cities (United States)

Published in SPIE Proceedings Vol. 10586:
Advances in Patterning Materials and Processes XXXV
Christoph K. Hohle, Editor(s)

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